177. Ronnasi, B.; McKillop, S. P.; Ourabi, M.; Perry, M.; Sharp, H. A.; Lessard, B. H.* Chitosan-based Electronics: The Importance of Acid Strength and Plasticizing Additives on The Device Performance. doi:10.1021/acsami.4c10508

172. Dallaire, N.; Boileau, N. T.; Myers, I.; Brixi, S.; Ourabi, M.; Ewenike, R.; Cranston, R.; Lamontagne, H. R.; King, B.; Ronnasi, B.; Melville, O. A.; Manion, J. G.*; Lessard, B. H.* High Throughput Characterization of Organic Thin Film Transistors. doi:10.1002/adma.202406105

163. Ronnasi, B.; King, B.; Brixi, S.; Swaraj, S.; Niskanen, J.; Lessard, B. H.; Electron Donating Functional Polymer Dielectrics to Reduce the Threshold Voltage of n-type Organic Thin-Film Transistors. doi:10.1002/aelm.202300810

144. Tousignant, M. N.; Ronnasi, B.; Tischler, V.; Lessard, B. H.*. N-type Single Walled Carbon Nanotube Thin Film Transistors using Green Tri-layer Polymer Dielectric. doi:10.1002/admi.202300079

143. King, B.; Radford. C.; Vebber, M.; Ronnasi, B.; Lessard, B. H.*. Not just surface energy: The role of bis(penta fluorophenoxy) silicon phthalocyanine axial functionalization and molecular orientation on organic thin film transistor performance. doi:10.1021/acsami.2c22789

142. Nosov, D.; Ronnasi, B.; Lozinskaya, E.; Ponkratov, D.; Puchot , L.; Grysan, P.; Schmidt, D.; Lessard, B. H.*; Shaplov, A.*. Mechanically robust poly(ionic liquid) block copolymers as self-assembling gating material for single walled carbon nanotube based thin film transistors. doi:10.1021/acsapm.2c02223

141. Ronnasi, B.; Tousignant, M.; Lessard, B. H.*. Chitosan dielectrics for use in single walled carbon nanotube-based thin film Transistors. doi:10.1039/D2TC04458G

139. Vebber, M.; King, B.; French, C.; Tousignant, M.; Ronnasi, B.; Dindault, C.; Wantz, G.; Hirsch, L.; Brusso, J.; Lessard, B. H.* Peripheral Fluorination in silicon phthalocyanines enables air stable N-type operation in organic electronics. doi:10.1002/cjce.24843